BDT30CF - INCHANGE

BDT30CF PNP Transistor

·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Complement to Type BDT29F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio out.

Features

℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30AF BDT30BF BDT30CF IC= -30mA; IB= 0 BDT30DF VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -1.