BDT30 - INCHANGE

BDT30 PNP Transistor

·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television a.

Features

RAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30A BDT30B IC= -30mA; IB= 0 BDT30C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A Base-Emitter On Voltage IC= -1A ; VCE= -4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 .