BD809 - INCHANGE

BD809 NPN Transistor

·DC Current Gain - : hFE =30@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD810 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃.

Features

herwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V ICBO Collector Cutoff Current VCB= 80V;IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 2A ; VCE= 2V hFE-2 DC Current Gain IC= 4A ; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V; ftest= 1.0MHz BD809 MIN MAX UNIT 80 V 1.1 V 1.6 V 1.0 mA 2.0 mA 30 15 1.5 MHz NOTICE： ISC reserves the rights to make ch.