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BD809 |
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| Part Number | BD809 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain - : hFE =30@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD810 ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 80V;IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 2A ; VCE= 2V
hFE-2
DC Current Gain
IC= 4A ; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 1.0A ; VCE= 10V; ftest= 1.0MHz
BD809
MIN MAX UNIT
80
V
1.1
V
1.6
V
1.0
mA
2.0
mA
30
15
1.5
MHz
NOTICE： ISC reserves the rights to make ch... |
| Document |
 BD809 Data Sheet
PDF 206.21KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD800 |
INCHANGE |
PNP Transistor |
|
| 2 | BD800M5WFP2-C |
ROHM |
LDO Regulators |
|
| 3 | BD800M5WFPJ-C |
ROHM |
LDO Regulators |
|
| 4 | BD800M5WHFP-C |
ROHM |
LDO Regulators |
|
| 5 | BD801 |
Motorola Inc |
Plastic High Power Silicon NPN Transistor |
|