BD800 - INCHANGE

BD800 PNP Transistor

·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Saturation Voltage ·Complement to Type BD799 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages o.

Features

isc Silicon PNP Power Transistor BD800 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -1A ; VCE= -2V 30 hFE-2 DC Current Gain IC= -3A ; VCE= -2V 15 fT Current-Gain—Bandwidth Prod.