BD751B - INCHANGE

BD751B NPN Transistor

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD750B/750C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM.

Features

tors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD751B BD751C IC=50mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage BD751B IC= 7.5A; IB= 0.75A BD751C IC= 5A; IB= 0.5A ICEV Collector Cutoff Current BD751B VCEV= 110V;VBE(off)= 1.5V BD751C VCEV= 140V;VBE(off)= 1.5V IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain BD751B IC= 7.5A ; VCE= 2V BD751C IC= 5A ; VCE= 2V BD751B.