BD750A - INCHANGE

BD750A Silicon PNP Power Transistors

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A ·High Power Dissipation ·Complement to Type BD751/751A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME.

Features

sistors BD750/750A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750 BD750A IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750 IC= -7.5A; IB= -0.75A BD750A IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage BD750 IC= -7.5A; IB= -0.75A BD750A IC= -5A; IB= -0.5A ICEV Collector Cutoff Current BD750 VCEV= -100V;VBE(off)= -1.5V BD750A VCEV= -130V;VBE(off)= -1.5V IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE DC Current Gain BD750 IC= -7.5A ; VCE= -2.