BD750B - INCHANGE

BD750B PNP Transistor

· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C ·High Power Dissipation ·Complement to Type BD751B/751C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PAR.

Features

Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD750B BD750C IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD750B IC= -7.5A; IB= -0.75A BD750C IC= -5A; IB= -0.5A VBE(sat) Base-Emitter Saturation Voltage BD750B IC= -7.5A; IB= -0.75A BD750C IC= -5A; IB= -0.5A ICEV Collector Cutoff Current BD750B VCEV= -110V;VBE(off)= -1.5V BD750C VCEV= -140V;VBE(off)= -1.5V IEBO Emitter Cutoff Current VEB= -7V; IC=0 hFE DC Current Gain BD750B IC= -7.5A ; VCE= -2V BD750C.