·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202 -60V(Min)- BD204 ·Complement to Type BD201/203 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER V.
, Junction to Ambient 70 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage BD202 BD204 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO.
PNP BD202 – BD204 SILCON EPITAXIAL-BASE POWER TRANSISTORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-2.
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD202.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BD201 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | BD201 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSISTORS | |
3 | BD201F |
INCHANGE |
NPN Transistor | |
4 | BD202F |
INCHANGE |
PNP Transistor | |
5 | BD203 |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BD203 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
7 | BD203 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSISTORS | |
8 | BD203F |
INCHANGE |
NPN Transistor | |
9 | BD204 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
10 | BD204 |
CDIL |
PNP PLASTIC POWER TRANSISTORS | |
11 | BD204 |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | BD204 |
Comset Semiconductors |
SILCON EPITAXIAL-BASE POWER TRANSITORS |