BD202F - INCHANGE

BD202F PNP Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD202F -60V(Min)- BD204F ·Complement to Type BD201F/203F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE.

Features

sc Silicon PNP Power Transistor BD202F/204F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BD202F BD204F IC= -50mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(sat) Base-Emitter Saturation Voltage IC= -6A; IB= -0.6A VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V ICEO Collect.