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BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. • High Current • NPN Complement is BCP56 • The SOT−223 Package can be soldered using wave or reflow. The formed le.
100 −5.0 1.5 1.5 12 Vdc Vdc Vdc Adc W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (Surface Mounted) Lead Temperature for Solderi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCP53-16T |
nexperia |
1A PNP medium power transistors |
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| 2 | BCP53-16T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 3 | BCP53-16 |
STMicroelectronics |
LOW POWER PNP TRANSISTOR |
|
| 4 | BCP53-16 |
NXP |
PNP medium power transistors |
|
| 5 | BCP53-16 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 6 | BCP53-16H |
nexperia |
PNP medium power transistors |
|
| 7 | BCP53-10 |
NXP |
PNP medium power transistors |
|
| 8 | BCP53-10 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 9 | BCP53-10H |
nexperia |
PNP medium power transistors |
|
| 10 | BCP53-10T |
nexperia |
1A PNP medium power transistors |
|
| 11 | BCP53-10T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 12 | BCP53 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|