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PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP53T SOT223 BCP53-10T BCP53-16T JEDEC SC-73 NPN comlement BCP56T BCP56-10T BCP56-16T 1.2. Features and benefits • High collector current capability IC and ICM • Three current gain selec.
• High collector current capability IC and ICM
• Three current gain selections
• High power dissipation capability
• AEC-Q101 qualified
1.3. Applications
• Linear voltage regulators
• MOSFET drivers
• High-side switches
• Power management
• Amplifiers
1.4. Quick reference data
Table 2. Quick reference data Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VCEO
collector-emitter voltage open base
IC collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
Min Typ Max Unit - - -80 V - - -1 A - - -2 A
Nexperia
Symbol hFE
Parameter DC current gain BCP5.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCP53-16 |
STMicroelectronics |
LOW POWER PNP TRANSISTOR |
|
| 2 | BCP53-16 |
NXP |
PNP medium power transistors |
|
| 3 | BCP53-16 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 4 | BCP53-16H |
nexperia |
PNP medium power transistors |
|
| 5 | BCP53-16T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 6 | BCP53-16T3G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 7 | BCP53-10 |
NXP |
PNP medium power transistors |
|
| 8 | BCP53-10 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 9 | BCP53-10H |
nexperia |
PNP medium power transistors |
|
| 10 | BCP53-10T |
nexperia |
1A PNP medium power transistors |
|
| 11 | BCP53-10T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 12 | BCP53 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|