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PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BCP53H SOT223 BCP53-10H BCP53-16H JEITA SC-73 JEDEC - NPN complement BCP56H BCP56-10H BCP56-16H 1.2 Features and benefits High collector current capability IC and ICM Three current .
High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
High-temperature applications up to 175 C
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
VCEO
collector-emitter voltage open base
IC collector current ICM peak collector current single pulse;.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BCP53-16 |
STMicroelectronics |
LOW POWER PNP TRANSISTOR |
|
| 2 | BCP53-16 |
NXP |
PNP medium power transistors |
|
| 3 | BCP53-16 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 4 | BCP53-16T |
nexperia |
1A PNP medium power transistors |
|
| 5 | BCP53-16T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 6 | BCP53-16T3G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 7 | BCP53-10 |
NXP |
PNP medium power transistors |
|
| 8 | BCP53-10 |
Infineon Technologies AG |
PNP Silicon AF Transistors |
|
| 9 | BCP53-10H |
nexperia |
PNP medium power transistors |
|
| 10 | BCP53-10T |
nexperia |
1A PNP medium power transistors |
|
| 11 | BCP53-10T1G |
ON Semiconductor |
PNP Silicon Epitaxial Transistors |
|
| 12 | BCP53 |
STMicroelectronics |
MEDIUM POWER AMPLIFIER |
|