Silicon Switching Diode Array For high-speed switching q Electrically insulated diodes q BAW 100 Type BAW 100 Marking JSs Ordering Code (tape and reel) Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Juncti.
V, TA = 150 ˚C VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr
–
–
–
– 2 6 pF ns V(BR) VF
–
–
–
– IR
–
–
–
–
–
– 1 30 50
–
–
–
– 715 855 1000 1250
µA
Values typ. max.
Unit
85
–
–
V mV
Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω
Oscillograph:
R = 50 Ω tr = 0.35 ns C ≤ 1 pF
Semiconductor Group
2
BAW 100
Forward current IF = f (TA
*; TS)
* Package mounted on epoxy
Reverse current IR = f (TA)
Forward current IF .
The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching dio.
SMD Type Silicon Switching Diode Array BAW100 Features For high-speed switching Electrically insulated diodes Diodes .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAW100G |
Central Semiconductor |
SILICON SWITCHING DIODES | |
2 | BAW101 |
Siemens Group |
Silicon Switching Diode | |
3 | BAW101 |
Central Corp |
HIGH VOLTAGE SWITCHING DIODE | |
4 | BAW101 |
Infineon Technologies AG |
Silicon Switching Diode | |
5 | BAW101 |
NXP |
High voltage double diode | |
6 | BAW101 |
Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE | |
7 | BAW101 |
Kexin |
Silicon Switching Diode Array | |
8 | BAW101 |
LGE |
High Voltage Double Diode | |
9 | BAW101S |
NXP |
High voltage double diode | |
10 | BAW101S |
Diodes |
HIGH VOLTAGE DUAL SWITCHING DIODE | |
11 | BAW101S |
Kexin |
High Voltage Double Diode | |
12 | BAW101V |
Diodes |
HIGH VOLTAGE DUAL SWITCHING DIODE |