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Features • Fast Switching Speed: Maximum of 50ns • High Reverse Breakdown Voltage: 325V for Single Diode or 650V for Series Connection • Two Electrically Isolated Elements in a Single Compact Package • Low Leakage Current: Maximum of 50nA when VR = 5V or Maximum of 150nA when VR = 250V at Room Temperature • Thermally Efficient Copper Alloy leadframe for High.
• Fast Switching Speed: Maximum of 50ns
• High Reverse Breakdown Voltage: 325V for Single Diode or
650V for Series Connection
• Two Electrically Isolated Elements in a Single Compact Package
• Low Leakage Current: Maximum of 50nA when VR = 5V or
Maximum of 150nA when VR = 250V at Room Temperature
• Thermally Efficient Copper Alloy leadframe for High Power
Dissipation
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
• "Green" Device (Note 4)
BAW101V
HIGH VOLTAGE DUAL SWITCHING DIODE
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammabi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BAW101 |
Siemens Group |
Silicon Switching Diode |
|
| 2 | BAW101 |
Central Corp |
HIGH VOLTAGE SWITCHING DIODE |
|
| 3 | BAW101 |
Infineon Technologies AG |
Silicon Switching Diode |
|
| 4 | BAW101 |
NXP |
High voltage double diode |
|
| 5 | BAW101 |
Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE |
|
| 6 | BAW101 |
Kexin |
Silicon Switching Diode Array |
|
| 7 | BAW101 |
LGE |
High Voltage Double Diode |
|
| 8 | BAW101S |
NXP |
High voltage double diode |
|
| 9 | BAW101S |
Diodes |
HIGH VOLTAGE DUAL SWITCHING DIODE |
|
| 10 | BAW101S |
Kexin |
High Voltage Double Diode |
|
| 11 | BAW100 |
Siemens Group |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
|
| 12 | BAW100 |
Central Semiconductor |
SILICON SWITCHING DIODES |
|