The CENTRAL SEMICONDUCTOR BAW100 and BAW100G each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is designed for high speed switching applications. • The BAW100G is Halogen Free by design. MARKING CODES: BAW100: CJSS BAW100G: CJSG MAXIMUM RATINGS: (TA=25°C) Contin.
ONS MIN MAX IR IR IR BVR VF VF VF VF CT trr VR=25V, TA=150°C VR=75V VR=75V, TA=150°C IR=100μA 85 IF=1.0mA IF=10mA IF=50mA IF=150mA VR=0, f=1.0MHz IF=IR=10mA, RL=100Ω, Rec. to 1.0mA 30 1.0 50 715 855 1.00 1.25 2.0 6.0 UNITS V V mA mA A A A mW °C °C/W UNITS μA μA μA V mV mV V V pF ns R4 (20-November 2009) BAW100 BAW100G SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-143 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) ANODE D1 2) ANODE D2 3) CATHODE D2 4) CATHODE D1 w w w. c e n t r a l s e m i . c o m MARKING CODES: BAW100: CJSS BAW100G: CJSG R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BAW100 |
Siemens Group |
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) | |
2 | BAW100 |
Central Semiconductor |
SILICON SWITCHING DIODES | |
3 | BAW100 |
Kexin |
Silicon Switching Diode Array | |
4 | BAW101 |
Siemens Group |
Silicon Switching Diode | |
5 | BAW101 |
Central Corp |
HIGH VOLTAGE SWITCHING DIODE | |
6 | BAW101 |
Infineon Technologies AG |
Silicon Switching Diode | |
7 | BAW101 |
NXP |
High voltage double diode | |
8 | BAW101 |
Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE | |
9 | BAW101 |
Kexin |
Silicon Switching Diode Array | |
10 | BAW101 |
LGE |
High Voltage Double Diode | |
11 | BAW101S |
NXP |
High voltage double diode | |
12 | BAW101S |
Diodes |
HIGH VOLTAGE DUAL SWITCHING DIODE |