Silicon PIN Diode • Current-controlled RF resistor for switching and attenuating applications • Frequency range 1 MHz ... 2 GHz • Especially useful as antenna switch in TV-sat tuners • Very low harmonics • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BA595/BA885/BA895... BA595 BA895 BA895-02V BA885 ! Type BA595 BA885 BA895* BA895-0.
istance Calculation) Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V Forward voltage IF = 50 mA IR - - 20 VF - - 1.1 AC Characteristics Diode capacitance VR = 0 V, f = 100 MHz VR = 10 V, f = 1 MHz CT - 0.26 0.4 - 0.22 0.6 Reverse parallel resistance VR = 1 V, f = 100 MHz VR = 0 V, f = 1 GHz RP Forward resistance IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz rf Charge carrier life time τ rr IF = 10 mA, IR = 6 mA, measured at IR = 3 mA , RL = 100 Ω I-region wi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BA895 |
Infineon Technologies AG |
Silicon PIN Diode | |
2 | BA891 |
NXP |
Band-switching diode | |
3 | BA891 |
Leshan Radio Company |
Band-switching diode | |
4 | BA892 |
NXP |
Band-switching diode | |
5 | BA892 |
Siemens Semiconductor Group |
Silicon Rf Switching Diode Preliminary data | |
6 | BA892 |
Leshan Radio Company |
Band-switching diode | |
7 | BA892 |
Infineon Technologies AG |
Silicon RF Switching Diode | |
8 | BA892-02L |
Infineon Technologies AG |
Silicon RF Switching Diode | |
9 | BA892-02V |
Infineon Technologies AG |
Silicon RF Switching Diode | |
10 | BA892V-02V |
Vishay Siliconix |
Band Switching Diodes | |
11 | BA892V-02V-GS08 |
Vishay Siliconix |
Band Switching Diodes | |
12 | BA892V-04W |
Vishay Siliconix |
Band Switching Diodes |