BA892 - Infineon Technologies AG

BA892 Silicon RF Switching Diode

Silicon RF Switching Diode • For band switching in TV/VTR tuners and mobile applications • Very low forward resistance (typ. 0.45 Ω @ 3 mA) • Small capacitance • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BA592/BA892... BA592 BA892/-02L BA892-02V  Type BA592 BA892 BA892-02L BA892-02V Package SOD323 SCD80 TSLP-2-1 SC79 Configuratio.

Features

teristics Reverse current VR = 20 V Forward voltage IF = 100 mA IR - - 20 VF - - 1 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit nA V 2 2011-07-21 BA592/BA892... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values AC Characteristics min. typ. max. Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 0 V, f = 100 MHz CT 0.65 0.92 1.4 0.6 0.85 1.1 - 1- Reverse parallel resistance VR = 0 V, f = 100 MHz Forward resistance IF = 3 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Charge carrier life time IF = .