The main purpose of the BA892V-02V is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and not as a diode any more. Depending on the forward current the forward resistance rf can be switched far below 1 Ω, so that the Switch is closed. To open the Sw.
• Low forward resistance
• Small, space saving SOD523 package with low series inductance
• Small capacitance
Applications
• Band switching up to 3 GHz
• Low loss band-switching in TV/VTR tuners
Parts Table
Part BA892V-02V Ordering code BA892V-02V-GS08 A Marking Remarks Tape and Reel Package SOD523
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Sub type Symbol VR IF Tj Tstg Value 35 100 150 -55 to +150 Unit V mA °C °C
Maximum Thermal Resistance
Tamb = 25 °C, unless othe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BA892V-02V-GS08 |
Vishay Siliconix |
Band Switching Diodes | |
2 | BA892V-04W |
Vishay Siliconix |
Band Switching Diodes | |
3 | BA892 |
NXP |
Band-switching diode | |
4 | BA892 |
Siemens Semiconductor Group |
Silicon Rf Switching Diode Preliminary data | |
5 | BA892 |
Leshan Radio Company |
Band-switching diode | |
6 | BA892 |
Infineon Technologies AG |
Silicon RF Switching Diode | |
7 | BA892-02L |
Infineon Technologies AG |
Silicon RF Switching Diode | |
8 | BA892-02V |
Infineon Technologies AG |
Silicon RF Switching Diode | |
9 | BA891 |
NXP |
Band-switching diode | |
10 | BA891 |
Leshan Radio Company |
Band-switching diode | |
11 | BA895 |
Infineon Technologies AG |
Silicon PIN Diode | |
12 | BA895-02V |
Infineon |
Silicon PIN Diode |