PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ Power Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1322 Silicon PNP epit.
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
Rating
–30
–25
–5
–1
–1.5 1 150
–55 to +150
Unit V V V A A W °C °C
Package
Code
MT-2-A1
Pin Name
1. Emitter 2. Collector 3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base volta.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1320 |
Panasonic Semiconductor |
2SB1320 | |
2 | B1321A |
Panasonic Semiconductor |
2SB1321A | |
3 | B1322N1GB |
ETC |
Built int Single oven Stainless Steel | |
4 | B1324 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors | |
5 | B1325 |
Sanyo |
PNP / NPN Epitaxial Planar Transistors | |
6 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
7 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER | |
8 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
9 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
10 | B1301 |
Renesas |
PNP SIlicon Transistor | |
11 | B1302 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor | |
12 | B130B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |