B1321A - Panasonic Semiconductor

B1321A 2SB1321A

Transistors 2SB1321A Silicon PNP epitaxial planer type Unit: mm For general amplification Complementary to 2SD1992A I Features • Large collector power dissipation P C (600 mW) • Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Coll.

Features

• Large collector power dissipation P C (600 mW)
• Allowing supply with the radial taping 6.9±0.1 0.15 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.65 max. 1.0 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −7 −1 −500 600 150 −55 to +150 Unit V V V A mA mW °C °C 1 2 3 0.45−0.05 2.5±0.5 2.5±0.5 +0.1 Note) In addition to the lea.