PlehtatMspae:i//nvitwseitwnfaw.onlslceoe/wmiiDipnclsgdoaicnsn.oUcepnRtodaiLpnnlntdimiaauansasneibcuoednooteniduinetdntcilnt.cmlnayactauiupnoe.dnecejstetdepe/sittnefnyyfanopp/lonleercodemwitatnyigpo fen.ourDisMcaionnttieProductnnualifecycleenstage.dce/ Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1320 Silicon PNP epitaxial .
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO
IC ICP PC Tj Tstg
Rating
–30
–25
–7
–100
–200 400 150
–55 to +150
Unit V V V mA mA mW °C °C
Package
Code
MT-1-A1
Pin Name
1. Emitter 2. Collector 3. Base
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-bas.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B1321A |
Panasonic Semiconductor |
2SB1321A | |
2 | B1322 |
Panasonic Semiconductor |
Power Transistors | |
3 | B1322N1GB |
ETC |
Built int Single oven Stainless Steel | |
4 | B1324 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors | |
5 | B1325 |
Sanyo |
PNP / NPN Epitaxial Planar Transistors | |
6 | B130 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER | |
7 | B130 |
EIC |
SCHOTTKY BARRIER RECTIFIER | |
8 | B130-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
9 | B130-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier | |
10 | B1301 |
Renesas |
PNP SIlicon Transistor | |
11 | B1302 |
Sanyo |
PNP Epitaxial Planar Silicon Transistor | |
12 | B130B |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |