(3 k Ω)(1 0 0 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1258 –100 –100 –6 –6(Pulse–10) –1 30(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1258 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–100V VEB=–6V IC=–10mA VCE=–2V, IC=–3A IC=–3A, IB=–6mA IC=–.
6typ tf (µs) 0.5typ
2.54
3.9 B C E
±0.2
0.8±0.2
a b
ø3.3±0.2
Weight : Approx 2.0g a. Type No. b. Lot No.
I C
– V CE Characteristics (Typical)
–6
A 3.
– 4 2.
V CE ( sat )
– I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
–3
I C
– V BE Temperature Characteristics (Typical)
–6 (V C E =
–4V)
4m
mA
–2.0
mA
–1 .8 m A
IB
–5 Collector Current I C (A)
=
–
–5 Collector Current I C (A)
–1.2 mA
–4
–4
–0.9mA
–3
–2
mp)
–3
)
Temp
(Cas
–2
125˚C
–6A
–4A
–1 I C =
–2A
–1
25˚C
–1
0
0
–1
–2
–3
–4
–5
–6
–0.6
–0.5
–1
–10 Base Current I B (m.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | B125-C1000 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
2 | B125-C1500 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
3 | B125-C1500R |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS | |
4 | B1250T |
BOURNS |
SMD Power Cross Protection Fuse | |
5 | B1252 |
Panasonic |
Power Transistors | |
6 | B1253 |
Panasonic Semiconductor |
2SB1253 | |
7 | B1254 |
Panasonic Semiconductor |
2SB1254 | |
8 | B1255 |
Panasonic |
2SB1255 | |
9 | B125C1000 |
FAGOR |
1 Amp. Glass Passivated Bridge Rectifier | |
10 | B125C1000G |
Vishay |
Glass Passivated Single-Phase Bridge Rectifier | |
11 | B125C1000G |
General Semiconductor |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER | |
12 | B125C1500G |
General Semiconductor |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |