B1252 - Panasonic

B1252 Power Transistors

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1892 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 0.7±0.1 4.2±0.2 s Features q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack pack.

Features

q Optimum for 35W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < 2.5V q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) 14.0±0.5 Solder Dip 4.0 16.7±0.3 7.5±0.2 φ3.1±0.1 1.3±0.2 1.4±0.1 0.8±0.1 0.5 +0.2
  –0.1 Parameter Symbol Ratings Unit 2.54±0.25 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Stora.