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Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1895 Unit: mm 12.5 3.5 15.0±0.2 0.7 s Features q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): < –2.5V q Full-pack package which can be installed t.
q Optimum for 90W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <
–2.5V q Full-pack package which can be installed to the heat sink with
one screw
21.0±0.5
15.0±0.3 11.0±0.2
φ3.2±0.1
5.0±0.2 3.2
2.0±0.2
2.0±0.1
Solder Dip
16.2±0.5
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
1.1±0.1
5.45±0.3 10.9±0.5
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Jun.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | B125-C1000 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 2 | B125-C1500 |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 3 | B125-C1500R |
EIC discrete Semiconductors |
SILICON BRIDGE RECTIFIERS |
|
| 4 | B1250T |
BOURNS |
SMD Power Cross Protection Fuse |
|
| 5 | B1252 |
Panasonic |
Power Transistors |
|
| 6 | B1253 |
Panasonic Semiconductor |
2SB1253 |
|
| 7 | B1254 |
Panasonic Semiconductor |
2SB1254 |
|
| 8 | B1258 |
Sanken electric |
2SB1258 |
|
| 9 | B125C1000 |
FAGOR |
1 Amp. Glass Passivated Bridge Rectifier |
|
| 10 | B125C1000G |
Vishay |
Glass Passivated Single-Phase Bridge Rectifier |
|
| 11 | B125C1000G |
General Semiconductor |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
|
| 12 | B125C1500G |
General Semiconductor |
GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER |
|