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Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Collector-base voltage VCBO −80 Collector-emitter voltage VCEO −80 Emitter-base voltage VEBO −5 Collector current .
1) High breakdown voltage, BVCEO=80V, and
high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859.
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
−80
Collector-emitter voltage
VCEO
−80
Emitter-base voltage
VEBO
−5
Collector current
IC −0.7
Collector power dissipation
2SB1189 2SB1238
PC
0.5 2 1
Junction temperature
Tj 150
Storage temperature
Tstg −55 to +150
∗1 When mounted on a 40×40×0.7 mm ceramic board. ∗2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.
Unit V V V A
W ∗1
∗2
°C °C
Packaging specifi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | B1230 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | B1232 |
Sanyo Semicon Device |
2SB1232 |
|
| 3 | B1235 |
Sanyo |
2SB1235PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | B1236 |
ROHM |
Power Transistor |
|
| 5 | B1236 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 6 | B1236A |
Rohm |
Power Transistor |
|
| 7 | B1237 |
Rohm |
2SB1237 |
|
| 8 | B120 |
Ferranti |
Low Voltage X-Ray Tube |
|
| 9 | B120 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 10 | B120 |
Genesis Microchip |
highly integrated single chip interface controller |
|
| 11 | B120-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 12 | B120-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|