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·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SD1857 APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Co.
Voltage IC= -1A; IB= -0.1A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE-1 DC Current Gain IC= -0.1A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V COB Output Capacitance IE=0; VCB= -10V, ftest= 1MHz MIN TYP. MAX UNIT -2 V -1.5 V -1.0 μA -1.0 μA 120 390 50 MHz 30 pF isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark .
B1236 - ROHM
Transistors Power Transistor (−120V, −1.5A) 2SB1236 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Lo.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | B1230 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 2 | B1232 |
Sanyo Semicon Device |
2SB1232 |
|
| 3 | B1235 |
Sanyo |
2SB1235PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 4 | B1236A |
Rohm |
Power Transistor |
|
| 5 | B1237 |
Rohm |
2SB1237 |
|
| 6 | B1238 |
Rohm |
2SB1238 |
|
| 7 | B120 |
Ferranti |
Low Voltage X-Ray Tube |
|
| 8 | B120 |
Diodes Incorporated |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
|
| 9 | B120 |
Genesis Microchip |
highly integrated single chip interface controller |
|
| 10 | B120-E3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 11 | B120-M3 |
Vishay |
Surface Mount Schottky Barrier Rectifier |
|
| 12 | B1200CALRP |
Littelfuse |
SIDACtor Protection Thyristors |
|