Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base v.
1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.
(Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.
Absolute maximum ratings (Ta = 25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Collector 2SB1275 power dissipation 2SB1236A Junction temperature
Symbol VCBO VCEO VEBO IC
PC
Tj
Limits −160 −160
−5 −1.5 −3
1 10 1
150
Storage temperature
Tstg −55 to +150
∗ 1 Single pulse Pw=100ms ∗ 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
.
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---|---|---|---|---|
1 | B1236 |
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2 | B1236 |
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3 | B1230 |
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4 | B1232 |
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5 | B1235 |
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7 | B1238 |
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8 | B120 |
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9 | B120 |
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12 | B120-M3 |
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