AUIRGB4062D1 AUIRGS4062D1 AUTOMOTIVE GRADE AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Trench IGBT Technology • Low Switching Losses • 5μs SCSOA • Square RBSOA • 100% of The Parts Tested for ILM • Positive VCE (on) Temperature Coefficient. • Ultra Fast Soft Recovery Co-pak Di.
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free, RoHS Compliant
• Automotive Qualified
* Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Applications
• Air Conditio.
AUTOMOTIVE GRADE AUIRGB4062D1 AUIRGS4062D1 AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVER.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRGS30B60K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | AUIRGS30B60K |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | AUIRGSL30B60K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AUIRGSL30B60K |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | AUIRGSL4062D1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | AUIRGSL4062D1 |
Infineon |
IGBT | |
7 | AUIRG4BC30S-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | AUIRG4BC30S-SL |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | AUIRG4BC30U-S |
International Rectifier |
UltraFast Speed IGBT | |
10 | AUIRG4BC30U-SL |
International Rectifier |
UltraFast Speed IGBT | |
11 | AUIRG4PC40S-E |
International Rectifier |
Insulated Gate Bipolar Transistor | |
12 | AUIRG4PC40S-E |
Infineon |
Insulated Gate Bipolar Transistor |