AUIRG4PC40S-E - International Rectifier

AUIRG4PC40S-E Insulated Gate Bipolar Transistor

  AUTOMOTIVE GRADE Insulated Gate Bipolar Transistor Features  Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)  Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3  Industry standard TO-247AD package  Lead-Free  Automotive Qualified* C  G E n-channel  .

Features

 Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
 Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
 Industry standard TO-247AD package
 Lead-Free
 Automotive Qualified
* C  G E n-channel  C AUIRG4PC40S-E VCES = 600V VCE(ON) typ. = 1.32V @ VGE = 15V, IC = 31A Benefits
 Generation 4 IGBT's offer highest efficiency available
 IGBT's optimized for specified application conditions
 Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's G Gate .