AUIRGS30B60K - Infineon

AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (on) Non Punch Through IGBT Technology  10µs Short Circuit Capability  Square RBSOA  Positive VCE (on) Temperature Coefficient.  Maximum Junction Temperature rated at 175°C  Lead-Free, RoHS Compliant  Automotive Qualified * * Benefits  Benchmark Efficien.

Features

 Low VCE (on) Non Punch Through IGBT Technology
 10µs Short Circuit Capability
 Square RBSOA
 Positive VCE (on) Temperature Coefficient.
 Maximum Junction Temperature rated at 175°C
 Lead-Free, RoHS Compliant
 Automotive Qualified
*
* Benefits
 Benchmark Efficiency for Motor Control
 Rugged Transient Performance for Increased Reliability
 Low EMI
 Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50A,TC = 100C At TJ = 175°C tSC 10µs, TJ = 150°C VCE(on) typ. = 1.95V C CE G AUIRGS30B60K D2Pak E GC AUIRGSL30B60K TO-262Pak G Gate C Collector E E.