AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-P.
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• Low VCE (ON) Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (I LM) Positive VCE (ON) Temperature Coefficient Soft Recovery Co-Pak Diode Tight parameter distribution Lead-Free, RoHS Compliant Automotive Qualified
* E C G C
G E C
AUIRGP4066D1 AUIRGP4066D1-E
VCES = 600V IC(Nominal) = 75A
tSC ≥ 5μs, TJ(max) = 175°C
n-channel
C
VCE(on) typ. = 1.70V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencie.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRGP4066D1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | AUIRGP4062D |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | AUIRGP4062D-E |
Infineon |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AUIRGP4063D |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | AUIRGP4063D-E |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | AUIRGP35B60PD |
International Rectifier |
IGBT | |
7 | AUIRGP35B60PD |
Infineon |
IGBT | |
8 | AUIRGP35B60PD-E |
International Rectifier |
IGBT | |
9 | AUIRGP35B60PD-E |
Infineon |
IGBT | |
10 | AUIRGP50B60PD1 |
International Rectifier |
WARP2 SERIES IGBT | |
11 | AUIRGP50B60PD1 |
Infineon |
IGBT | |
12 | AUIRGP50B60PD1-E |
Infineon |
IGBT |