AUIRGP4062D - Infineon

AUIRGP4062D INSULATED GATE BIPOLAR TRANSISTOR

AUTOMOTIVE GRADE AUIRGP4062D AUIRGP4062D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features  Low VCE (on) Trench IGBT Technology  Low Switching Losses  5µs SCSOA  Square RBSOA  100% of The Parts Tested for ILM  Positive VCE (on) Temperature Coefficient.  Ultra Fast Soft Recovery Co-pak Diode  Tighter Distribution of P.

Features

 Low VCE (on) Trench IGBT Technology
 Low Switching Losses
 5µs SCSOA
 Square RBSOA
 100% of The Parts Tested for ILM
 Positive VCE (on) Temperature Coefficient.
 Ultra Fast Soft Recovery Co-pak Diode
 Tighter Distribution of Parameters
 Lead-Free, RoHS Compliant
 Automotive Qualified
* C G E n-channel C VCES = 600V IC = 24A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.60V C Benefits
 High Efficiency in a Wide Range of Applications
 Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
 Rugged Transient Performance for Incre.