AUIRGP50B60PD1-E - Infineon

AUIRGP50B60PD1-E IGBT

AUTOMOTIVE GRADE AUIRGP50B60PD1 AUIRGP50B60PD1-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications  Automotive HEV and EV  PFC and ZVS SMPS Circuits Features  Low VCE(ON) NPT Technology, Positive Temperature Coefficient  Lower Parasitic Capacitances  Minimal Tail Current  HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode  Tighter Distr.

Features

 Low VCE(ON) NPT Technology, Positive Temperature Coefficient
 Lower Parasitic Capacitances
 Minimal Tail Current
 HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
 Tighter Distribution of Parameters
 Lead-Free, RoHS Compliant
 Automotive Qualified
* Benefits
 Parallel Operation for Higher Current Applications
 Lower Conduction Losses and Switching Losses
 Higher Switching Frequency up to 150kHz C G E n-channel C VCES = 600V VCE(on) typ. = 2.00V @ VGE = 15V IC = 33A Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ  ID (FET equivalent) = 50A C GC E TO-247AC AUIRGP50B60PD1 GC E TO.