AUTOMOTIVE GRADE AUIRGC4066B Insulated Gate Bipolar Transistor C VCES = 600V IC (Nominal) = 75A tSC 5µs, TJ (max) = 175°C VCE(on) typ = 1.7V @ IC= 75A Applications HEV Inverter G E n-channel Features Low VCE(on) Trench IGBT Technology Low Switching losses 5 µs Short Circuit Capability Square RBSOA and 100% Clamp IL Tested Tight parameter distrib.
Low VCE(on) Trench IGBT Technology Low Switching losses 5 µs Short Circuit Capability Square RBSOA and 100% Clamp IL Tested Tight parameter distribution Lead-Free, RoHS Compliant Automotive qualified Benefits High efficiency in a wide range of applications Suitable for a wide range of switching frequencies due to Low VCE(on) and Low switching losses Rugged motor drive operation Rugged hard switching operation Simpler system level design Environmentally friendlier Qualification standard can be found at http://www.irf.com Base part number Package Type AUIRGC4066B Die on Film Mechanical Par.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRG4BC30S-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | AUIRG4BC30S-SL |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | AUIRG4BC30U-S |
International Rectifier |
UltraFast Speed IGBT | |
4 | AUIRG4BC30U-SL |
International Rectifier |
UltraFast Speed IGBT | |
5 | AUIRG4PC40S-E |
International Rectifier |
Insulated Gate Bipolar Transistor | |
6 | AUIRG4PC40S-E |
Infineon |
Insulated Gate Bipolar Transistor | |
7 | AUIRG4PH50S |
International Rectifier |
Standard Speed IGBT | |
8 | AUIRG7CH80K6B-M |
International Rectifier |
AUTOMOTIVE GRADE | |
9 | AUIRGB4062D1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | AUIRGB4062D1 |
Infineon |
IGBT | |
11 | AUIRGDC0250 |
Infineon |
IGBT | |
12 | AUIRGDC0250 |
International Rectifier |
IGBT |