AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency • Industry standard TO-247AC package • Lead-Free • Automotive Qualified * G E n-channel AUIRG4PH50S VCES = 1200V.
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified
*
G
E
n-channel
AUIRG4PH50S
VCES = 1200V IC = 81A@ TC = 100°C VCE(on) typ. = 1.47V@ 33A
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
G Gate
TO-247AC
C Collector
E Emitter
Base part number AUIRG4PH50S
Package Type TO-247AC
Standard Pack
Form
Quantity
Tube
25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRG4PC40S-E |
International Rectifier |
Insulated Gate Bipolar Transistor | |
2 | AUIRG4PC40S-E |
Infineon |
Insulated Gate Bipolar Transistor | |
3 | AUIRG4BC30S-S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | AUIRG4BC30S-SL |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | AUIRG4BC30U-S |
International Rectifier |
UltraFast Speed IGBT | |
6 | AUIRG4BC30U-SL |
International Rectifier |
UltraFast Speed IGBT | |
7 | AUIRG7CH80K6B-M |
International Rectifier |
AUTOMOTIVE GRADE | |
8 | AUIRGB4062D1 |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | AUIRGB4062D1 |
Infineon |
IGBT | |
10 | AUIRGC4066B |
International Rectifier |
Insulated Gate Bipolar Transistor | |
11 | AUIRGDC0250 |
Infineon |
IGBT | |
12 | AUIRGDC0250 |
International Rectifier |
IGBT |