Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features c.
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFZ24NL |
Infineon |
Power MOSFET | |
2 | AUIRFZ24NL |
International Rectifier |
Power MOSFET | |
3 | AUIRFZ44N |
Infineon |
Power MOSFET | |
4 | AUIRFZ44NL |
International Rectifier |
Power MOSFET | |
5 | AUIRFZ44NS |
International Rectifier |
Power MOSFET | |
6 | AUIRFZ44V |
International Rectifier |
Power MOSFET | |
7 | AUIRFZ44VZS |
Infineon |
Power MOSFET | |
8 | AUIRFZ44VZS |
International Rectifier |
Power MOSFET | |
9 | AUIRFZ44Z |
Infineon |
Power MOSFET | |
10 | AUIRFZ44Z |
International Rectifier |
HEXFET Power MOSFET | |
11 | AUIRFZ44ZS |
Infineon |
Power MOSFET | |
12 | AUIRFZ44ZS |
International Rectifier |
HEXFET Power MOSFET |