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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
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HEXFET® Power MOSFET
D V(BR)DSS
60V
RDS(on) typ. 9.6mΩ
G max. 12mΩ
S ID
57A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avala.
AUIRFZ44VZS - Infineon
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AUIRFZ44V |
International Rectifier |
Power MOSFET |
|
| 2 | AUIRFZ44N |
Infineon |
Power MOSFET |
|
| 3 | AUIRFZ44NL |
International Rectifier |
Power MOSFET |
|
| 4 | AUIRFZ44NS |
International Rectifier |
Power MOSFET |
|
| 5 | AUIRFZ44Z |
Infineon |
Power MOSFET |
|
| 6 | AUIRFZ44Z |
International Rectifier |
HEXFET Power MOSFET |
|
| 7 | AUIRFZ44ZS |
Infineon |
Power MOSFET |
|
| 8 | AUIRFZ44ZS |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | AUIRFZ48N |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | AUIRFZ48Z |
International Rectifier |
Power MOSFET |
|
| 11 | AUIRFZ48ZS |
International Rectifier |
Power MOSFET |
|
| 12 | AUIRFZ24NL |
Infineon |
Power MOSFET |
|