Specifically designed for Automotive applications, this stripe planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely ef.
l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
*
G
AUIRFZ44V
HEXFET® Power MOSFET
D V(BR)DSS
60V
RDS(on) max. 16.5mΩ
S ID
55A
D
Description
Specifically designed for Automotive applications, this stripe planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized dev.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFZ44N |
Infineon |
Power MOSFET | |
2 | AUIRFZ44NL |
International Rectifier |
Power MOSFET | |
3 | AUIRFZ44NS |
International Rectifier |
Power MOSFET | |
4 | AUIRFZ44VZS |
Infineon |
Power MOSFET | |
5 | AUIRFZ44VZS |
International Rectifier |
Power MOSFET | |
6 | AUIRFZ44Z |
Infineon |
Power MOSFET | |
7 | AUIRFZ44Z |
International Rectifier |
HEXFET Power MOSFET | |
8 | AUIRFZ44ZS |
Infineon |
Power MOSFET | |
9 | AUIRFZ44ZS |
International Rectifier |
HEXFET Power MOSFET | |
10 | AUIRFZ48N |
International Rectifier |
HEXFET Power MOSFET | |
11 | AUIRFZ48Z |
International Rectifier |
Power MOSFET | |
12 | AUIRFZ48ZS |
International Rectifier |
Power MOSFET |