Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFU4104 |
International Rectifier |
Power MOSFET | |
2 | AUIRFU4292 |
Infineon |
Power MOSFET | |
3 | AUIRFU4292 |
International Rectifier |
Power MOSFET | |
4 | AUIRFU4615 |
International Rectifier |
Power MOSFET | |
5 | AUIRFU024N |
International Rectifier |
Power MOSFET | |
6 | AUIRFU120Z |
Infineon |
Power MOSFET | |
7 | AUIRFU120Z |
International Rectifier |
Power MOSFET | |
8 | AUIRFU3607 |
International Rectifier |
Advanced Process Technology | |
9 | AUIRFU5305 |
Infineon |
Power MOSFET | |
10 | AUIRFU5305 |
International Rectifier |
AUTOMOTIVE MOSFET | |
11 | AUIRFU5305 |
International Rectifier |
Power MOSFET | |
12 | AUIRFU540Z |
Infineon |
Power MOSFET |