Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficien.
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AUIRFR024N AUIRFU024N
HEXFET® Power MOSFET
D
Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
*
V(BR)DSS
55V 0.075Ω
17A
G S
RDS(on) max.
ID
D
g
D
Description
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and rugg.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFU120Z |
Infineon |
Power MOSFET | |
2 | AUIRFU120Z |
International Rectifier |
Power MOSFET | |
3 | AUIRFU3607 |
International Rectifier |
Advanced Process Technology | |
4 | AUIRFU4104 |
International Rectifier |
Power MOSFET | |
5 | AUIRFU4105Z |
Infineon |
Power MOSFET | |
6 | AUIRFU4105Z |
International Rectifier |
HEXFET Power MOSFET | |
7 | AUIRFU4292 |
Infineon |
Power MOSFET | |
8 | AUIRFU4292 |
International Rectifier |
Power MOSFET | |
9 | AUIRFU4615 |
International Rectifier |
Power MOSFET | |
10 | AUIRFU5305 |
Infineon |
Power MOSFET | |
11 | AUIRFU5305 |
International Rectifier |
AUTOMOTIVE MOSFET | |
12 | AUIRFU5305 |
International Rectifier |
Power MOSFET |