AUIRFR3607 AUIRFU3607 HEXFET® Power MOSFET D G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D 75V 7.34mΩ 9.0mΩ 80A 56A c Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
* Description
AUIRFR3607 AUIRFU3607
HEXFET® Power MOSFET
D
G S
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D
75V 7.34mΩ 9.0mΩ 80A 56A
c
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRFU024N |
International Rectifier |
Power MOSFET | |
2 | AUIRFU120Z |
Infineon |
Power MOSFET | |
3 | AUIRFU120Z |
International Rectifier |
Power MOSFET | |
4 | AUIRFU4104 |
International Rectifier |
Power MOSFET | |
5 | AUIRFU4105Z |
Infineon |
Power MOSFET | |
6 | AUIRFU4105Z |
International Rectifier |
HEXFET Power MOSFET | |
7 | AUIRFU4292 |
Infineon |
Power MOSFET | |
8 | AUIRFU4292 |
International Rectifier |
Power MOSFET | |
9 | AUIRFU4615 |
International Rectifier |
Power MOSFET | |
10 | AUIRFU5305 |
Infineon |
Power MOSFET | |
11 | AUIRFU5305 |
International Rectifier |
AUTOMOTIVE MOSFET | |
12 | AUIRFU5305 |
International Rectifier |
Power MOSFET |