Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficie.
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified
*
AUTOMOTIVE GRADE
AUIRF7309Q
S1
G1
N-CHANNEL MOSFET 18
27
D1 D1
VDSS
N-CH 30V
P-CH -30V
S2 3 G2 4
6 D2
5 D2 RDS(on) max. 0.05 0.10
P-CHANNEL MOSFET
Top View
ID
4.7A -3.5A
Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF7303Q |
Infineon |
Dual N-Channel MOSFET | |
2 | AUIRF7303Q |
International Rectifier |
Power MOSFET | |
3 | AUIRF7304Q |
Infineon |
Dual P-Channel MOSFET | |
4 | AUIRF7304Q |
International Rectifier |
Power MOSFET | |
5 | AUIRF7313Q |
Infineon |
Dual N-Channel MOSFET | |
6 | AUIRF7313Q |
International Rectifier |
Power MOSFET | |
7 | AUIRF7316Q |
Infineon |
Dual P-Channel MOSFET | |
8 | AUIRF7316Q |
International Rectifier |
Power MOSFET | |
9 | AUIRF7319Q |
Infineon |
Dual N/P-Channel MOSFET | |
10 | AUIRF7319Q |
International Rectifier |
Power MOSFET | |
11 | AUIRF7341Q |
Infineon |
Dual N-Channel MOSFET | |
12 | AUIRF7341Q |
International Rectifier |
Power MOSFET |