AUIRF7309Q |
Part Number | AUIRF7309Q |
Manufacturer | International Rectifier |
Description | Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit c... |
Features |
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AUIRF7309Q
HEXFET® Power MOSFET
S1 G1 S2 G2
N-CHANNEL MOSFET 1 8 2 3 4 7 6 5
Advanced Planar Technology Low On-Resistance Dual N and P Channel MOSFET Dynamic dV/dT Rating 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified*
D1 D1 D2 D2
N-CH P-CH V(BR)DSS ID 30V 4.7A -30V -3.5A RDS(on) max. 0.05Ω 0.10Ω
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit... |
Document |
AUIRF7309Q Data Sheet
PDF 328.27KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | AUIRF7309Q |
Infineon |
Dual N/P-Channel MOSFET | |
2 | AUIRF7303Q |
Infineon |
Dual N-Channel MOSFET | |
3 | AUIRF7303Q |
International Rectifier |
Power MOSFET | |
4 | AUIRF7304Q |
Infineon |
Dual P-Channel MOSFET | |
5 | AUIRF7304Q |
International Rectifier |
Power MOSFET |