AUIRF7304Q - Infineon

AUIRF7304Q Dual P-Channel MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficie.

Features

 Advanced Planar Technology
 Low On-Resistance
 Dual P Channel MOSFET
 Dynamic dv/dt Rating
 Logic Level
 150°C Operating Temperature
 Fast Switching
 Lead-Free, RoHS Compliant
 Automotive Qualified
* AUTOMOTIVE GRADE AUIRF7304Q   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View HEXFET® Power MOSFET VDSS -20V RDS(on) max. ID 0.090 -4.3A Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast swit.