Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely ef.
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HEXFET® Power MOSFET
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Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
*
V(BR)DSS
55V 4.7mΩ
135A
G S
RDS(on) max.
ID
h
Description
Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF2805 |
International Rectifier |
Power MOSFET | |
2 | AUIRF2805S |
International Rectifier |
Power MOSFET | |
3 | AUIRF2804 |
Infineon |
Power MOSFET | |
4 | AUIRF2804 |
International Rectifier |
Power MOSFET | |
5 | AUIRF2804L |
Infineon |
Power MOSFET | |
6 | AUIRF2804L |
International Rectifier |
Power MOSFET | |
7 | AUIRF2804S |
Infineon |
Power MOSFET | |
8 | AUIRF2804S |
International Rectifier |
Power MOSFET | |
9 | AUIRF2804S-7P |
International Rectifier |
Power MOSFET | |
10 | AUIRF2807 |
International Rectifier |
Power MOSFET | |
11 | AUIRF2903Z |
International Rectifier |
Power MOSFET | |
12 | AUIRF2903ZL |
Infineon |
Power MOSFET |