AUIRF2805 - International Rectifier

AUIRF2805 Power MOSFET

AUIRF2805 HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 3.9m 4.7m 175A 75A G S ID (Package Limited) D Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the .

Features

l Advanced Planar Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified
* Description AUIRF2805 HEXFET® Power MOSFET D V(BR)DSS RDS(on) typ. max ID (Silicon Limited) 55V 3.9m 4.7m 175A 75A G S ID (Package Limited) D Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switchin.