Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified
*
Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient a.
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest www.DataSheet4U.com pro.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUIRF2804L |
Infineon |
Power MOSFET | |
2 | AUIRF2804L |
International Rectifier |
Power MOSFET | |
3 | AUIRF2804S |
Infineon |
Power MOSFET | |
4 | AUIRF2804S |
International Rectifier |
Power MOSFET | |
5 | AUIRF2804S-7P |
International Rectifier |
Power MOSFET | |
6 | AUIRF2805 |
International Rectifier |
Power MOSFET | |
7 | AUIRF2805L |
International Rectifier |
Power MOSFET | |
8 | AUIRF2805S |
International Rectifier |
Power MOSFET | |
9 | AUIRF2807 |
International Rectifier |
Power MOSFET | |
10 | AUIRF2903Z |
International Rectifier |
Power MOSFET | |
11 | AUIRF2903ZL |
Infineon |
Power MOSFET | |
12 | AUIRF2903ZL |
International Rectifier |
Power MOSFET |