AUFS4410Z - VBsemi

AUFS4410Z N-Channel MOSFET

AUFS4410Z-VB AUFS4410Z-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.004 at VGS = 10 V ID (A) 140a FEATURES • TrenchFET® Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D D2PAK (TO-263) G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwis.

Features

• TrenchFET® Power MOSFET
• New Package with Low Thermal Resistance
• 100 % Rg Tested D D2PAK (TO-263) G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C) Pulsed Drain Current TC = 25 °C TC = 125 °C Avalanche Current Repetitive Avalanche Energyb L = 0.1 mH Maximum Power Dissipationb Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C VDS VGS ID IDM IAR EAR PD TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB.