AUFS3006-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) Configuration AUFS3006-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com 60 0.0025 0.0070 270 Single FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-263 D G Top View S D G S N-Channel MOSFET AB.
• TrenchFET® power MOSFET
• Package with low thermal resistance
• 100 % Rg and UIS tested
TO-263
D
G
Top View
S D G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AUFS3306 |
VBsemi |
N-Channel MOSFET | |
2 | AUFS4410Z |
VBsemi |
N-Channel MOSFET | |
3 | AUFR2405 |
VBsemi |
N-Channel MOSFET | |
4 | AU01 |
Sanken electric |
Fast Recovery Diode | |
5 | AU01 |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
6 | AU01 |
Hitachi |
ZENER DIODE | |
7 | AU01A |
Sanken electric |
Fast Recovery Diode | |
8 | AU01A |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
9 | AU01Z |
Sanken electric |
Fast Recovery Diode | |
10 | AU01Z |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
11 | AU02 |
EIC |
FAST RECOVERY RECTIFIER DIODES | |
12 | AU02 |
Sanken electric |
Fast Recovery Diode |